原文
    The semiconductor device includes a first transistor including a first impurity layer of a first conductivity type formed in a first region of a semiconductor substrate, a first epitaxial semiconductor layer formed above the first impurity layer, a first gate insulating film formed above the first epitaxial semiconductor layer, and a first gate electrode formed above the first gate insulating film, and a second transistor including a second impurity layer of the second conductivity type formed in a second region of the semiconductor substrate, a second epitaxial semiconductor layer formed above the second impurity layer and having a thickness different from that of the first epitaxial semiconductor layer, a second gate insulating film formed above the second epitaxial semiconductor layer and having a film thickness equal to that of the first gate insulating film and a second gate electrode formed above the second gate insulating film.

译文
    该半导体器件包括：第一晶体管，包括在半导体衬底的第一区域中形成的第一导电类型的第一杂质层，在第一杂质层上方形成的第一外延半导体层，在第一外延半导体层上方形成的第一栅极绝缘膜，以及在第一栅极绝缘膜上方形成的第一栅极电极；以及第二晶体管，包括在半导体衬底的第二区域中形成的第二导电类型的第二杂质层；在第二杂质层上方形成的且具有与第一外延半导体层不同厚度的第二外延半导体层，在第二外延半导体层上方形成的且具有与第一栅极绝缘膜相同膜厚度的第二栅极绝缘膜，以及在第二栅极绝缘膜上方形成的第二栅极电极。